SEOUL -- Samsung Electronics said Wednesday that it will invest $7 billion over three years to double production capacity for NAND flash memory in China, the top importer of South Korean semiconductors.
The company will build a second line at its Xi'an fabrication facility in inland Shaanxi Province, lifting monthly capacity to the equivalent of 220,000 300mm silicon wafers by 2020. The new line is expected to make cutting-edge 3-D flash memory, which can hold much more data than conventional chips.
