ArrowArtboardCreated with Sketch.Title ChevronTitle ChevronIcon FacebookIcon LinkedinIcon Mail ContactPath LayerIcon MailPositive ArrowIcon Print
Semiconductors

Kioxia develops 170-layer NAND, joining elite chipmaking club

Former Toshiba Memory to produce smaller, faster memory chip with eye on 5G

The new NAND memory can write data more than twice as fast as Kioxia's current top-of-the line product.

TOKYO -- Japanese chipmaker Kioxia has developed NAND flash memory with roughly 170 layers, joining American peer Micron Technology and South Korea's SK Hynix in obtaining the cutting-edge technology, Nikkei has learned.

The new NAND memory was developed jointly with U.S. partner Western Digital, and can write data more than twice as fast as Kioxia's current top-of-the line product, which is 112 layers.

Sponsored Content

About Sponsored Content This content was commissioned by Nikkei's Global Business Bureau.

Discover the all new Nikkei Asia app

  • Take your reading anywhere with offline reading functions
  • Never miss a story with breaking news alerts
  • Customize your reading experience

Nikkei Asian Review, now known as Nikkei Asia, will be the voice of the Asian Century.

Celebrate our next chapter
Free access for everyone - Sep. 30

Find out more