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Semiconductors

Kioxia develops 170-layer NAND, joining elite chipmaking club

Former Toshiba Memory to produce smaller, faster memory chip with eye on 5G

The new NAND memory can write data more than twice as fast as Kioxia's current top-of-the line product.

TOKYO -- Japanese chipmaker Kioxia has developed NAND flash memory with roughly 170 layers, joining American peer Micron Technology and South Korea's SK Hynix in obtaining the cutting-edge technology, Nikkei has learned.

The new NAND memory was developed jointly with U.S. partner Western Digital, and can write data more than twice as fast as Kioxia's current top-of-the line product, which is 112 layers.

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