TOKYO -- Japanese chipmaker Kioxia has developed NAND flash memory with roughly 170 layers, joining American peer Micron Technology and South Korea's SK Hynix in obtaining the cutting-edge technology, Nikkei has learned.
The new NAND memory was developed jointly with U.S. partner Western Digital, and can write data more than twice as fast as Kioxia's current top-of-the line product, which is 112 layers.
