TOKYO -- Japanese chipmaker Kioxia Holdings has developed NAND flash memory technology with higher storage capacity and 33% faster interface speed, anticipating strong demand from artificial intelligence data centers.
When compared with eighth-generation, 218-layer technology now in mass production, the 10th-generation, 332-layer innovation boasts an increase in bit density for data storage by 59%. It consumes less electricity, enhancing power efficiency by 10% for data input and 34% for output, the company said Thursday in a statement with U.S. partner Sandisk.
.jpg?width=178&fit=cover&gravity=faces&dpr=2&quality=medium&source=nar-cms&format=auto&height=100)