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Mitsubishi Electric to quintuple silicon carbide power device output

Company to invest $700m in new Japanese plant

A rendering of Mitsubishi Electric's planned semiconductor plant in Japan. The company is doubling its capital investments in power semiconductors. (Photo courtesy of Mitsubishi Electric)

TOKYO -- Mitsubishi Electric will quintuple production capacity for energy-saving silicon carbide power semiconductor devices by investing roughly 100 billion yen ($744 million) in a new Japanese factory under plans announced Tuesday.

A total of 260 billion yen in power semiconductor capital spending is targeted over the five years ending fiscal 2025, doubling the previously planned 130 billion yen.

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